South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said on July 13 they have agreed to jointly develop a next-generation memory device. The companies said in a statement that the tie-up to develop spin-transfer torque magneto-resistance random access memory (STT-MRAM) technology - for use in devices such as smartphones - would help them minimise risk.
Toshiba recognises MRAM as an important next-generation memory technology that could sustain future growth in its semiconductor business, the statement said.
"MRAM is a rare gem full of exciting properties, like ultra high-speed, low-power consumption, and high capacity, and it will play the role of key factor in driving advances in memories," he said.